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TB 112 1997 SC 14 WG 14.17 Semiconductor power devices for use in HVDC and FACTS controllers.

During the recent years there has been a growing need for better utilisation of high voltage transmission systems. Power electronic equipment, having an inherent fast controllability, offers solutions to transmission system problems such as load flow and stability. Therefore, engineers are increasingly studying the potential of such equipment to make transmission systems more flexible and adaptive to changing requirements.

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TABLE OF CONTENTS

INTRODUCTION

1 CHARACTERISTIC OF POWER SEMICONDUCTOR DEVICES

      1.1 Summary of Device Physics

      1.2 Diodes

      1.3 Thyristors

      1.4 Gate Turn-of Thyristors (GTO)

      1.5 MOS Controlled Thyristors (MCT)

      1.6 Static Induction Thyristors (SITh)

      1.7 Insulted Gate Bipolar Transistors (IGBT)

      1.8 Summary

2 STATE OF THE ART IN SEMICONDUCTOR POWER DEVICES

      2.1 Thyristors

      2.2 GTO

      2.3 IGBT

      2.4 Diodes

      2.5 MCT

      2.6 SITh

3 CIRCUIT CONFIGURATIONS FOR FACTS CONTROLLERS

      3.1 Introduction

      3.2 HVDC

      3.3 Static Var Compensators (SVC)

      3.4 Thyristor Controlled Series Capacitor (TCSC)

      3.5 Basic Functioning of Self-Commutated Circuits

      3.6 Static Synchronous Compensator (STATCOM)

      3.7 Static Synchronous Series Compensator (SSSC)

      3.8 Unified Power Flow Controller (UPFC)

4 DEVICE IMPLICATIONS ON SYSTEM DESIGN

      4.1 Snubber Circuit Design

      4.2 Protection

      4.3 Gate Drive Design

      4.4 Series/Parallel Connection

      4.5 Mechanical Consideration/Packaging

      4.6 Volume

      4.7 Losses

      4.8 Reliability

      4.9 Summary

5 FUTURE TRENDS

      5.1 Base Material

      5.2 FACTS Designers Needs

      5.3 Outlook on Device Parameters

6 REFERENCES